2N5089
Manufacturer:
On Semiconductor
Mfr.Part #:
2N5089
Datasheet:
Description:
BJTs TO-92-3 Through Hole NPN 625 mW Collector Base Voltage (VCBO):30 V Collector Emitter Voltage (VCEO):500 mV Emitter Base Voltage (VEBO):3 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 25 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| Lead Free | Contains Lead |
| RoHS | Compliant |
| Polarity | NPN |
| Current Rating | 50 mA |
| Max Power Dissipation | 625 mW |
| Power Dissipation | 625 mW |
| Max Collector Current | 50 mA |
| Collector Emitter Breakdown Voltage | 25 V |
| Transition Frequency | 50 MHz |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 500 mV |
| Gain Bandwidth Product | 50 MHz |
| Collector Base Voltage (VCBO) | 30 V |
| Collector Emitter Saturation Voltage | 500 mV |
| Emitter Base Voltage (VEBO) | 3 V |
| hFE Min | 400 |
| Max Cutoff Collector Current | 50 nA |
| Transistor Type | NPN |
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